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Multi-Protruding disc Aluminum nitride ceramic substrate

Aluminium nitride polycrystalline materials have a thermal conductivity of 70~210 W / (m.k), while single crystals can be as high as 275 W / (m.k) or more, which is five times higher than that of alumina.
  • 07005

Chemical formula for aluminium nitride:

Aluminium nitride has the chemical formula AlN and the chemical composition AI 65.81%, N 34.19%. Its powder is white or off-white, single crystal colourless and transparent, sublimation decomposition temperature at atmospheric pressure is 2450℃.
Aluminium nitride ceramic thermal conductivity:

The thermal conductivity of aluminium nitride polycrystalline material is 70~210 W / (m.k), and the single crystal can be as high as 275 W / (m.k) or more, which is 5 times of alumina.
Aluminium nitride ceramic substrates:

High thermal conductivity, low coefficient of expansion, high strength, high temperature resistance, chemical corrosion resistance, high resistivity, low dielectric loss, is the ideal large-scale integrated circuit heat dissipation substrate and packaging materials.
Properties of aluminium nitride:

High thermal conductivity (>170W/m-K), close to BeO and SiC, more than 5 times that of Al2O3;
Thermal expansion coefficient matches Si and GaAs;
Excellent various electrical properties (dielectric constant, dielectric loss, body resistivity, dielectric strength);
Good mechanical properties, higher flexural strength than Al2O3 and BeO ceramics, can be sintered at atmospheric pressure;
Can be made by casting process. It is a promising substrate and packaging material for high power integrated circuits.

Properties Of Aluminum Nitride Ceramics

Item Data Unit
Color Grey -
Density 3.30 g/cm3
Surface roughness Ra 0.01~0.7 um
Bending Strength 450 MPa
Moh's hardness 8 -
Thermal conductivity 180 25°C,W/(m·k)
Coefficient of Thermal Expansion 4 10-6/°C,100°C
Dielectric Constant 8.8 1MHz
Dielectric loss <3 1MHz,10-4
Electrical Resistivity >1014 25°C,Ω.cm
Dielectric strength 17 KV/mm

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