 |
| Quantity: | |
|---|---|
07005
 | Chemical formula for aluminium nitride: |
| Aluminium nitride has the chemical formula AlN and the chemical composition AI 65.81%, N 34.19%. Its powder is white or off-white, single crystal colourless and transparent, sublimation decomposition temperature at atmospheric pressure is 2450℃. |
| Aluminium nitride ceramic thermal conductivity: |
| The thermal conductivity of aluminium nitride polycrystalline material is 70~210 W / (m.k), and the single crystal can be as high as 275 W / (m.k) or more, which is 5 times of alumina. |
| Aluminium nitride ceramic substrates: |
| High thermal conductivity, low coefficient of expansion, high strength, high temperature resistance, chemical corrosion resistance, high resistivity, low dielectric loss, is the ideal large-scale integrated circuit heat dissipation substrate and packaging materials. |
| Properties of aluminium nitride: |
| High thermal conductivity (>170W/m-K), close to BeO and SiC, more than 5 times that of Al2O3; Thermal expansion coefficient matches Si and GaAs; Excellent various electrical properties (dielectric constant, dielectric loss, body resistivity, dielectric strength); Good mechanical properties, higher flexural strength than Al2O3 and BeO ceramics, can be sintered at atmospheric pressure; Can be made by casting process. It is a promising substrate and packaging material for high power integrated circuits. |
Properties Of Aluminum Nitride Ceramics
| Item | Data | Unit |
| Color | Grey | - |
| Density | 3.30 | g/cm3 |
| Surface roughness Ra | 0.01~0.7 | um |
| Bending Strength | 450 | MPa |
| Moh's hardness | 8 | - |
| Thermal conductivity | 180 | 25°C，W/(m·k) |
| Coefficient of Thermal Expansion | 4 | 10-6/°C，100°C |
| Dielectric Constant | 8.8 | 1MHz |
| Dielectric loss | ＜3 | 1MHz，10-4 |
| Electrical Resistivity | >1014 | 25°C，Ω.cm |
| Dielectric strength | 17 | KV/mm |
| Chemical formula for aluminium nitride: |
| Aluminium nitride has the chemical formula AlN and the chemical composition AI 65.81%, N 34.19%. Its powder is white or off-white, single crystal colourless and transparent, sublimation decomposition temperature at atmospheric pressure is 2450℃. |
| Aluminium nitride ceramic thermal conductivity: |
| The thermal conductivity of aluminium nitride polycrystalline material is 70~210 W / (m.k), and the single crystal can be as high as 275 W / (m.k) or more, which is 5 times of alumina. |
| Aluminium nitride ceramic substrates: |
| High thermal conductivity, low coefficient of expansion, high strength, high temperature resistance, chemical corrosion resistance, high resistivity, low dielectric loss, is the ideal large-scale integrated circuit heat dissipation substrate and packaging materials. |
| Properties of aluminium nitride: |
| High thermal conductivity (>170W/m-K), close to BeO and SiC, more than 5 times that of Al2O3; Thermal expansion coefficient matches Si and GaAs; Excellent various electrical properties (dielectric constant, dielectric loss, body resistivity, dielectric strength); Good mechanical properties, higher flexural strength than Al2O3 and BeO ceramics, can be sintered at atmospheric pressure; Can be made by casting process. It is a promising substrate and packaging material for high power integrated circuits. |
Properties Of Aluminum Nitride Ceramics
| Item | Data | Unit |
| Color | Grey | - |
| Density | 3.30 | g/cm3 |
| Surface roughness Ra | 0.01~0.7 | um |
| Bending Strength | 450 | MPa |
| Moh's hardness | 8 | - |
| Thermal conductivity | 180 | 25°C，W/(m·k) |
| Coefficient of Thermal Expansion | 4 | 10-6/°C，100°C |
| Dielectric Constant | 8.8 | 1MHz |
| Dielectric loss | ＜3 | 1MHz，10-4 |
| Electrical Resistivity | >1014 | 25°C，Ω.cm |
| Dielectric strength | 17 | KV/mm |
