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07001
Aluminum nitride ceramic substrate
High thermal conductivity (>170W/m-K), close to BeO and SiC, more than 5 times that of Al2O3;
Thermal expansion coefficient matches Si and GaAs;
Excellent various electrical properties (dielectric constant, dielectric loss, body resistivity, dielectric strength);
Good mechanical properties, higher flexural strength than Al2O3 and BeO ceramics, can be sintered at atmospheric pressure;
Can be made by casting process. It is a promising substrate and packaging material for high power integrated circuits.
Properties Of Aluminum Nitride Ceramics
| Item | Data | Unit |
| Color | Grey | - |
| Density | 3.30 | g/cm3 |
| Surface roughness Ra | 0.01~0.7 | um |
| Bending Strength | 450 | MPa |
| Moh's hardness | 8 | - |
| Thermal conductivity | 180 | 25°C，W/(m·k) |
| Coefficient of Thermal Expansion | 4 | 10-6/°C，100°C |
| Dielectric Constant | 8.8 | 1MHz |
| Dielectric loss | ＜3 | 1MHz，10-4 |
| Electrical Resistivity | >1014 | 25°C，Ω.cm |
| Dielectric strength | 17 | KV/mm |
Aluminum nitride ceramic substrate
High thermal conductivity (>170W/m-K), close to BeO and SiC, more than 5 times that of Al2O3;
Thermal expansion coefficient matches Si and GaAs;
Excellent various electrical properties (dielectric constant, dielectric loss, body resistivity, dielectric strength);
Good mechanical properties, higher flexural strength than Al2O3 and BeO ceramics, can be sintered at atmospheric pressure;
Can be made by casting process. It is a promising substrate and packaging material for high power integrated circuits.
Properties Of Aluminum Nitride Ceramics
| Item | Data | Unit |
| Color | Grey | - |
| Density | 3.30 | g/cm3 |
| Surface roughness Ra | 0.01~0.7 | um |
| Bending Strength | 450 | MPa |
| Moh's hardness | 8 | - |
| Thermal conductivity | 180 | 25°C，W/(m·k) |
| Coefficient of Thermal Expansion | 4 | 10-6/°C，100°C |
| Dielectric Constant | 8.8 | 1MHz |
| Dielectric loss | ＜3 | 1MHz，10-4 |
| Electrical Resistivity | >1014 | 25°C，Ω.cm |
| Dielectric strength | 17 | KV/mm |
