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4 Inch SiC Porous Ceramic Vacuum Chuck with Alumina Base for Semiconductor Wafer Dicing Grinding Customizable

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4 Inch SiC Porous Ceramic Vacuum Chuck with Alumina Base for Semiconductor Wafer Dicing Grinding Customizable

4-Inch Porous Ceramic Vacuum Chuck (SiC Working Surface / Alumina Base)
This vacuum chuck features a 4-inch (100 mm) porous silicon carbide (SiC) working surface on an alumina ceramic base. It is engineered for holding thin, fragile and high-precision workpieces such as semiconductor wafers, glass and optical components. The interconnected microporous structure provides uniform suction across the entire chuck face, keeping workpieces flat and secure without clamping marks or deformation.
The chuck features a porous silicon carbide working layer on a high-strength alumina base, offering excellent wear resistance, chemical resistance and dimensional stability. Precision ground surfaces with tight flatness tolerances ensure reliable performance in wafer dicing, grinding, thinning, cleaning and inspection applications.
Custom sizes from 2 to 12 inches, pore sizes, porosity grades, base material options (alumina base / full SiC), hole patterns and mounting features are available according to customer drawings. OEM and ODM orders are welcome.
Applications: wafer dicing saws · grinders · thinning machines · cleaning chucks · inspection and measurement equipment · precision machining of optics and thin substrates

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Model:
05C27
Brand:
HaoRui
Code:
05C27

Product Description

4-Inch Porous Ceramic Vacuum Chuck

Porous silicon carbide (SiC) working surface on an alumina base — uniform microporous suction — holds thin, fragile workpieces flat and secure, without clamping marks.

ISO 9001 Custom sizes 2–12 inch Pore size 5 / 20 / 50 / 100 μm options 7–14 days for sample

4″ (100 mm) SiC porous working surface on alumina base, stepped profile with three positioning notches

Uniform Suction. Zero Deformation.

The interconnected microporous structure distributes vacuum evenly across the entire chuck face, so silicon wafers, glass and optical components stay flat and immobile during dicing, grinding, thinning, cleaning and inspection.

Machined with a porous silicon carbide working layer on a high-strength alumina base, it provides excellent wear and chemical resistance and will not contaminate sensitive workpieces and maintains stable performance in cleanroom environments.

Custom options: diameter, pore size, porosity grade, through holes, threaded holes, positioning notches, stepped profiles and anti-static treatment — manufactured to your drawings.

Key Advantages

1

Multiple Sizes and Custom Configurations

Standard 4, 6, 8 and 12 inch chucks in round, square or custom shapes — manufactured to your drawings with holes, notches and stepped profiles to match your vacuum system.

2

Uniform Vacuum Distribution

The microporous structure holds fragile workpieces flat and secure without clamping marks. Pore size options of 5, 20, 50 and 100 μm to match the required holding force, depending on the application.

3

High Flatness and Precision Machining

Precision ground and lapped surfaces with tight flatness and parallelism tolerances ensure consistent full-face contact and distortion-free holding.

4

Wear and Chemical Resistance

Porous silicon carbide surface withstands abrasive use and acidic or alkaline cleaning solutions, with low particle contamination for cleanroom compatibility.

5

Wide Application Range

Suitable for wafer dicing, grinding, thinning, cleaning and inspection chucks, plus precision holding of optics, electronics and thin substrates. Integrates with standard vacuum fittings for straightforward installation.

Specifications

Material	Porous silicon carbide (SiC) working surface on alumina ceramic base
Size	4 inch (100 mm) = SiC porous working surface diameter; base size and mounting per drawing
Pore size	5 / 20 / 50 / 100 μm options
Porosity	35–50%, depending on grade
Density	2.3–2.5 g/cm³ (typical)
Flexural strength	≥ 40 MPa
Compressive strength	≥ 600 MPa
Flatness	≤ 5–10 μm, depending on specification
Working pressure	≤ 0.7 MPa typical, depending on vacuum system
Operating temperature	Up to 1500 °C, depending on conditions
Surface finish	Ground / lapped; anti-static option available

Typical values for porous SiC on alumina base construction; exact properties depend on grade and configuration. Custom specifications available on request.